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期刊名字![]() | IEEE Journal of the Electron Devices Society IEEE J ELECTRON DEVI (此期刊被最新的JCR期刊SCIE收录) LetPub评分 6.3
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声誉 7.1 影响力 5.0 速度 9.4 | |||||||||||||||||||||||||
期刊ISSN | 2168-6734 | ![]() 蝌蝌APP,让您与同行交流更轻松
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2024-2025最新影响因子 (数据来源于搜索引擎) | 2.4 点击查看影响因子趋势图 | |||||||||||||||||||||||||
实时影响因子 | 截止2025年5月19日:2.455 | |||||||||||||||||||||||||
2024-2025自引率 | 4.20%点击查看自引率趋势图 | |||||||||||||||||||||||||
五年影响因子 | 2.5 | |||||||||||||||||||||||||
JCI期刊引文指标 | 0.53 | |||||||||||||||||||||||||
h-index | 23 | |||||||||||||||||||||||||
CiteScore ( 2025年最新版) |
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期刊简介 |
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期刊官方网站 | https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494 | |||||||||||||||||||||||||
期刊投稿格式模板 VIP专享 |
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期刊投稿网址 | http://mc.manuscriptcentral.com/jeds | |||||||||||||||||||||||||
期刊语言要求 | 经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢 。
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是否OA开放访问 | Yes | |||||||||||||||||||||||||
OA期刊相关信息![]() | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices 相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review | |||||||||||||||||||||||||
通讯方式 | 445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141 | |||||||||||||||||||||||||
出版商 | Institute of Electrical and Electronics Engineers Inc. | |||||||||||||||||||||||||
涉及的研究方向 | Biochemistry, Genetics and Molecular Biology-Biotechnology | |||||||||||||||||||||||||
出版国家或地区 | UNITED STATES | |||||||||||||||||||||||||
出版语言 | English | |||||||||||||||||||||||||
出版周期 | ||||||||||||||||||||||||||
出版年份 | 0 | |||||||||||||||||||||||||
年文章数 | 142点击查看年文章数趋势图 | |||||||||||||||||||||||||
Gold OA文章占比 | 98.96% | |||||||||||||||||||||||||
研究类文章占比: 文章 ÷(文章 + 综述) | 100.00% | |||||||||||||||||||||||||
WOS期刊SCI分区 ( 2024-2025年最新版) | WOS分区等级:3区
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中国科学院《国际期刊预警 名单(试行)》名单 | 2025年03月发布的2025版:不在预警名单中 2024年02月发布的2024版:不在预警名单中 2023年01月发布的2023版:不在预警名单中 2021年12月发布的2021版:不在预警名单中 2020年12月发布的2020版:不在预警名单中 | |||||||||||||||||||||||||
中国科学院SCI期刊分区 ( 2025年3月最新升级版) | 点击查看中国科学院SCI期刊分区趋势图
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中国科学院SCI期刊分区 ( 2023年12月升级版) |
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中国科学院SCI期刊分区 ( 2022年12月旧的升级版) |
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SCI期刊收录coverage | Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE) Scopus (CiteScore) Directory of Open Access Journals (DOAJ) | |||||||||||||||||||||||||
PubMed Central (PMC)链接 | http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D | |||||||||||||||||||||||||
平均审稿速度 | 网友分享经验: 9 Weeks | |||||||||||||||||||||||||
平均录用比例 | 网友分享经验: | |||||||||||||||||||||||||
版面费/APC文章处理费信息 | 文章处理费:需要( USD1350; ) 文章处理费豁免:查看说明 其他费用:没有 LetPub提供文章处理费(APC)支持服务,可以用人民币支付版面费啦! | |||||||||||||||||||||||||
LetPub助力发表 | 经LetPub编辑的稿件平均录用比例是未经润色的稿件的1.5倍,平均审稿时间缩短40%。众多作者在使用LetPub的专业SCI论文编辑服务(包括SCI论文英语润色,同行资深专家修改润色,SCI论文专业翻译,SCI论文格式排版,专业学术制图等)后论文在IEEE Journal of the Electron Devices Society顺利发表。
快看看作者怎么说吧:服务好评 论文致谢 。 提交文稿 | |||||||||||||||||||||||||
期刊常用信息链接 |
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中国学者近期发表的论文 | |
1. | Performance Analysis of Rare-Earth Doped Oxide Thin-Film Transistors Using Neural Network Method Author: Peng, Zengyi; Huang, Xianglan; Shen, Yuanyi; Wu, Weijing; Li, Min; Xu, Miao; Wang, Lei; Gu, Zhenghui; Yu, Zhuliang; Peng, Junbiao Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 263-269. DOI: 10.1109/JEDS.2025.3547646 DOI |
2. | Aging Analysis and Degradation Prediction of PLL Circuits in 14-nm FinFET Technology Author: Li, Meng; Xu, Xin; Li, Xianghui; Li, Yunpeng; Shi, Yiqun; Sun, Qingqing; Zhu, Hao Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 270-277. DOI: 10.1109/JEDS.2025.3549754 DOI |
3. | Characterization and Modeling of MOSFET Series Resistance Down to 4 K Author: Lin, Yuhuan; Ma, Zhizhao; Li, Shilong; Wen, Tianyue; Zhou, Yuxuan; Su, Hao; Zhou, Shenghua; Lin, Longyang; Li, Yida; Chen, Kai Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 297-302. DOI: 10.1109/JEDS.2025.3544738 DOI |
4. | Design and Optimization of Bilayer InGaSnO and Nitrogen-Doped InSnO Thin-Film Transistors for Enhanced Mobility and Reliability Author: Jiang, Weijie; Lu, Li; Li, Chenfei; Zhang, Wenyang; Wang, Wenzhao; Li, Guoli; Wang, Jingli; Liu, Xingqiang; Abliz, Ablat; Wan, Da Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 290-296. DOI: 10.1109/JEDS.2025.3552454 DOI |
5. | AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications Author: Huang, Xiaoyun; Tang, Hongyu; Xu, Chenggang; Zhu, Yuxuan; Pan, Yan; Gao, Dawei; Ma, Yitao; Xu, Kai Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 326-333. DOI: 10.1109/JEDS.2025.3555327 DOI |
6. | Proposal and Simulation of β-Ga2O3 Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage Author: Wang, Ce; Zhou, Hong; Alghamdi, Sami; Su, Chunxu; Liu, Zhihong; Dang, Kui; Zheng, Xuefeng; Ma, Xiaohua; Ma, Peijun; Hao, Yue; Zhang, Jincheng Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 334-342. DOI: 10.1109/JEDS.2025.3556408 DOI |
7. | Cryogenic InP HEMTs With Enhanced fmax and Reduced On-Resistance Using Double Recess Author: Chen, Yuxuan; Zhou, Fugui; Gong, Yongheng; Su, Yongbo; Ding, Wuchang; Shi, Jingyuan; Ding, Peng; Jin, Zhi Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 366-372. DOI: 10.1109/JEDS.2025.3557432 DOI |
8. | Self-Assembled Multilayer Single-Walled Carbon Nanotube Thin Film Transistors and Doping Regulation Author: Gao, Xiangxiang; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue; Chang, Jingjing Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 93-97. DOI: 10.1109/JEDS.2025.3532593 DOI |
9. | A Temperature-Dependent SPICE Model of SiC Power Trench MOSFET Switching Behavior Considering Parasitic Parameters Author: Shen, Pei; Jiang, Yuan; Zhang, Xiao-Dong; Dai, Ji-Yang Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 98-105. DOI: 10.1109/JEDS.2024.3498008 DOI |
10. | Trap Analysis of Normally-Off Ga2O3 MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB Author: He, Minghao; Li, Mujun; Deng, Chenkai; Wang, Xiaohui; Wang, Qing; Yu, Hongyu; Ang, Kah-Wee Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 112-116. DOI: 10.1109/JEDS.2025.3538769 DOI |
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