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IEEE Journal of the Electron Devices Society 期刊收藏夹

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IEEE Journal of the Electron Devices Society期刊基本信息Hello,您是该期刊的第55495位访客

基本信息 登录收藏
期刊名字IEEE Journal of the Electron Devices SocietyIEEE Journal of the Electron Devices Society

IEEE J ELECTRON DEVI
(此期刊被最新的JCR期刊SCIE收录)

LetPub评分
6.3
51人评分
我要评分

声誉
7.1

影响力
5.0

速度
9.4

期刊ISSN2168-6734
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2024-2025最新影响因子
(数据来源于搜索引擎)
2.4 点击查看影响因子趋势图
实时影响因子 截止2025年5月19日:2.455
2024-2025自引率4.20%点击查看自引率趋势图
五年影响因子2.5
JCI期刊引文指标 0.53
h-index 23
CiteScore
2025年最新版
CiteScoreSJRSNIPCiteScore排名
5.000.5191.142
学科分区排名百分位
大类:Engineering
小类:Electrical and Electronic Engineering
Q2295 / 970
大类:Engineering
小类:Electronic, Optical and Magnetic Materials
Q2112 / 305
大类:Engineering
小类:Biotechnology
Q2142 / 314

期刊简介
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
期刊官方网站https://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=6245494
期刊投稿格式模板
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此模板来自于期刊/出版社官网。开通VIP可免费下载,并享1w+期刊模板资源。
期刊投稿网址http://mc.manuscriptcentral.com/jeds
期刊语言要求经LetPub语言功底雄厚的美籍native English speaker精心编辑的稿件,不仅能满足IEEE Journal of the Electron Devices Society的语言要求,还能让IEEE Journal of the Electron Devices Society编辑和审稿人得到更好的审稿体验,让稿件最大限度地被IEEE Journal of the Electron Devices Society编辑和审稿人充分理解和公正评估。LetPub的专业SCI论文编辑服务(包括SCI论文英语润色同行资深专家修改润色SCI论文专业翻译SCI论文格式排版专业学术制图等)帮助作者准备稿件,已助力全球15万+作者顺利发表论文。部分发表范例可查看:服务好评 论文致谢
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是否OA开放访问Yes
OA期刊相关信息
文章处理费:需要( USD1350; )
文章处理费豁免:查看说明
其他费用:没有
期刊主题关键词:field effect transistors、logic gates、integrated circuit devices、display technologies、wearable devices
相关链接:Aims & ScopeAuthor InstructionsEditorial BoardAnonymous peer review
通讯方式445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
出版商Institute of Electrical and Electronics Engineers Inc.
涉及的研究方向Biochemistry, Genetics and Molecular Biology-Biotechnology
出版国家或地区UNITED STATES
出版语言English
出版周期
出版年份0
年文章数 142点击查看年文章数趋势图
Gold OA文章占比98.96%
研究类文章占比:
文章 ÷(文章 + 综述)
100.00%
WOS期刊SCI分区
2024-2025年最新版
WOS分区等级:3区

按JIF指标学科分区收录子集JIF分区JIF排名JIF百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONICSCIEQ3192/366
按JCI指标学科分区收录子集JCI分区JCI排名JCI百分位
学科:ENGINEERING, ELECTRICAL & ELECTRONICSCIEQ3185/366
中国科学院《国际期刊预警
名单(试行)》名单
2025年03月发布的2025版:不在预警名单中

2024年02月发布的2024版:不在预警名单中

2023年01月发布的2023版:不在预警名单中

2021年12月发布的2021版:不在预警名单中

2020年12月发布的2020版:不在预警名单中
中国科学院SCI期刊分区
2025年3月最新升级版
点击查看中国科学院SCI期刊分区趋势图
大类学科小类学科Top期刊综述期刊
工程技术 1区3区1区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区2区4区
中国科学院SCI期刊分区
2023年12月升级版
大类学科小类学科Top期刊综述期刊
工程技术 2区3区4区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
4区3区4区
中国科学院SCI期刊分区
2022年12月旧的升级版
大类学科小类学科Top期刊综述期刊
工程技术 4区3区1区
ENGINEERING, ELECTRICAL & ELECTRONIC
工程:电子与电气
1区3区3区
SCI期刊收录coverage Science Citation Index Expanded (SCIE) (2020年1月,原SCI撤销合并入SCIE,统称SCIE)
Scopus (CiteScore)
Directory of Open Access Journals (DOAJ)
PubMed Central (PMC)链接http://www.ncbi.nlm.nih.gov/nlmcatalog?term=2168-6734%5BISSN%5D
平均审稿速度网友分享经验:
9 Weeks
平均录用比例网友分享经验:
版面费/APC文章处理费信息
文章处理费:需要( USD1350; )
文章处理费豁免:查看说明
其他费用:没有
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期刊常用信息链接
同领域相关期刊 IEEE Journal of the Electron Devices Society期刊近年CiteScore指标趋势图
该杂志的自引率趋势图 IEEE Journal of the Electron Devices Society中国科学院SCI期刊分区趋势图
该杂志的年文章数趋势图 同领域作者分享投稿经验
IEEE Journal of the Electron Devices Society上中国学者近期发表的论文  
  • 同领域相关期刊
  • 期刊CiteScore趋势图
  • 期刊自引率趋势图
  • 中国科学院分区趋势图
  • 年文章数趋势图
  • 该期刊中国学者近期发文
  • 中国科学院分区相关期刊
  • 同类著名期刊名称 h-index CiteScore
    iMeta023.20
    Bioactive Materials036.20
    Journal of Water Process Engineering09.60
    Green Synthesis and Catalysis014.60
    Chemical and Biological Technologies in Agriculture08.30
    GM Crops & Food-Biotechnology in Agriculture and the Food Chain199.80
    CRISPR Journal07.20
    Current Research in Biotechnology06.60
    Biomimetics04.20
    Journal of Genetic Engineering and Biotechnology08.20
    中国科学院SCI期刊分区同大类学科的热搜期刊 浏览次数
    Energy1820200
    Fuel1547656
    APPLIED ENERGY1529478
    Construction and Building Materials1325710
    MEASUREMENT1291100
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT1265393
    SEPARATION AND PURIFICATION TECHNOLOGY1082508
    INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH1040329
    ENERGY & FUELS952005
    Energies945109
  •  

    IEEE Journal of the Electron Devices Society IEEE Journal of the Electron Devices Society
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    稳步上升 表现平稳 逐渐下降  刷新
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  • 中国学者近期发表的论文
    1.Performance Analysis of Rare-Earth Doped Oxide Thin-Film Transistors Using Neural Network Method

    Author: Peng, Zengyi; Huang, Xianglan; Shen, Yuanyi; Wu, Weijing; Li, Min; Xu, Miao; Wang, Lei; Gu, Zhenghui; Yu, Zhuliang; Peng, Junbiao
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 263-269. DOI: 10.1109/JEDS.2025.3547646
        DOI
    2.Aging Analysis and Degradation Prediction of PLL Circuits in 14-nm FinFET Technology

    Author: Li, Meng; Xu, Xin; Li, Xianghui; Li, Yunpeng; Shi, Yiqun; Sun, Qingqing; Zhu, Hao
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 270-277. DOI: 10.1109/JEDS.2025.3549754
        DOI
    3.Characterization and Modeling of MOSFET Series Resistance Down to 4 K

    Author: Lin, Yuhuan; Ma, Zhizhao; Li, Shilong; Wen, Tianyue; Zhou, Yuxuan; Su, Hao; Zhou, Shenghua; Lin, Longyang; Li, Yida; Chen, Kai
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 297-302. DOI: 10.1109/JEDS.2025.3544738
        DOI
    4.Design and Optimization of Bilayer InGaSnO and Nitrogen-Doped InSnO Thin-Film Transistors for Enhanced Mobility and Reliability

    Author: Jiang, Weijie; Lu, Li; Li, Chenfei; Zhang, Wenyang; Wang, Wenzhao; Li, Guoli; Wang, Jingli; Liu, Xingqiang; Abliz, Ablat; Wan, Da
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 290-296. DOI: 10.1109/JEDS.2025.3552454
        DOI
    5.AI-Assisted Design of Drain-Extended FinFET With Stepped Field Plate for Multi-Purpose Applications

    Author: Huang, Xiaoyun; Tang, Hongyu; Xu, Chenggang; Zhu, Yuxuan; Pan, Yan; Gao, Dawei; Ma, Yitao; Xu, Kai
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 326-333. DOI: 10.1109/JEDS.2025.3555327
        DOI
    6.Proposal and Simulation of β-Ga2O3 Hetero- Junction Schottky Diodes With Low Work-Function Anode and High Breakdown Voltage

    Author: Wang, Ce; Zhou, Hong; Alghamdi, Sami; Su, Chunxu; Liu, Zhihong; Dang, Kui; Zheng, Xuefeng; Ma, Xiaohua; Ma, Peijun; Hao, Yue; Zhang, Jincheng
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 334-342. DOI: 10.1109/JEDS.2025.3556408
        DOI
    7.Cryogenic InP HEMTs With Enhanced fmax and Reduced On-Resistance Using Double Recess

    Author: Chen, Yuxuan; Zhou, Fugui; Gong, Yongheng; Su, Yongbo; Ding, Wuchang; Shi, Jingyuan; Ding, Peng; Jin, Zhi
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 366-372. DOI: 10.1109/JEDS.2025.3557432
        DOI
    8.Self-Assembled Multilayer Single-Walled Carbon Nanotube Thin Film Transistors and Doping Regulation

    Author: Gao, Xiangxiang; Lin, Zhenhua; Zhang, Jincheng; Hao, Yue; Chang, Jingjing
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 93-97. DOI: 10.1109/JEDS.2025.3532593
        DOI
    9.A Temperature-Dependent SPICE Model of SiC Power Trench MOSFET Switching Behavior Considering Parasitic Parameters

    Author: Shen, Pei; Jiang, Yuan; Zhang, Xiao-Dong; Dai, Ji-Yang
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 98-105. DOI: 10.1109/JEDS.2024.3498008
        DOI
    10.Trap Analysis of Normally-Off Ga2O3 MOSFET Enabled by Charge Trapping Layer: Photon Stimulated Characterization and TDDB

    Author: He, Minghao; Li, Mujun; Deng, Chenkai; Wang, Xiaohui; Wang, Qing; Yu, Hongyu; Ang, Kah-Wee
    Journal: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2025; Vol. 13, Issue , pp. 112-116. DOI: 10.1109/JEDS.2025.3538769
        DOI
  • 同大类学科的其他著名期刊名称 h-index CiteScore
    Nature Electronics049.10
    PROGRESS IN ENERGY AND COMBUSTION SCIENCE16173.00
    Annual Review of Fluid Mechanics16350.60
    International Journal of Extreme Manufacturing021.60
    INTERNATIONAL JOURNAL OF MACHINE TOOLS & MANUFACTURE13332.10
    RENEWABLE & SUSTAINABLE ENERGY REVIEWS22238.00
    PROGRESS IN AEROSPACE SCIENCES9726.70
    Applied Mechanics Reviews9925.70
    Green Energy & Environment022.00
    Communications in Transportation Research019.90
    同分区等级的其他期刊名称 h-index CiteScore
    HemaSphere07.20
    COMMUNICATIONS OF THE ACM18914.30
    Wiley Interdisciplinary Reviews-Data Mining and Knowledge Discovery3121.70
    Journal of High Energy Astrophysics119.20
    Business & Information Systems Engineering018.60
    Business & Information Systems Engineering018.60
    CHINESE JOURNAL OF STRUCTURAL CHEMISTRY2114.80
    Battery Energy011.00
    Progress in Energy020.10
    CLINICAL NUCLEAR MEDICINE533.00
以上SCI期刊相关数据和信息来源于网络,仅供参考。
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