推荐同事 机构合作 中文 繁體中文 English 한국어 日本語 Português Español

美国ACCDON公司旗下品牌

021-33361733,021-34243363

chinasupport@letpub.com

登录 注册 新注册优惠

[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp
A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned
Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a
SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ...
Related articles - View as HTML - All 4 versions
[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua
... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS
JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer
can only be achieved by reduction of dislocation density at the heterojunction. ...
Related articles - All 4 versions
G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer
... injury. This is the first report in the liter- ature performing ligamentous reconstruction
using suture anchors in a case of severe joint instability after manipu- lative reduction
for dislocation of the first carpometacarpal joint. Our surgical ...
Related articles - All 3 versions
CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org
... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is
studied by cross-section transmission electron microscopy (TEM) and the pore
density is determined from atomic force microscopy (AFM) scan. ...
Related articles - All 4 versions
HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier
... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and
three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation-
induced twinning; however, this was observed only to a limited extent in the three samples. ...
Related articles
[PDF] from jsap.jpT Murase, T Tanikawa, Y Honda… - Japanese Journal of …, 2011 - jjap.jsap.jp
A drastic reduction of the dislocation density in a semipolar (11 22) GaN stripe on a patterned
Si substrate was achieved by the two-step selective growth of a GaN stripe. After depositing a
SiO2 mask on the (11 22) and (000 1) faces of a GaN stripe grown on a (113) Si ...
Related articles - View as HTML - All 4 versions
[PDF] from sumdu.edu.uaSD Bhattacharyya, P Mukhopadhyay, P Das… - 2011 - essuir.sumdu.edu.ua
... A STRATEGIC REVIEW OF REDUCTION OF DISLOCATION DENSITY AT THE HETEROGENIOUS
JUNCTION OF GAN EPILAYER ON FOREIGN SUBSTRATE ... A good quality metamorphic buffer
can only be achieved by reduction of dislocation density at the heterojunction. ...
Related articles - All 4 versions
G Okita, S Anayama, N Sato… - Archives of orthopaedic and …, 2011 - Springer
... injury. This is the first report in the liter- ature performing ligamentous reconstruction
using suture anchors in a case of severe joint instability after manipu- lative reduction
for dislocation of the first carpometacarpal joint. Our surgical ...
Related articles - All 3 versions
CB Soh, W Liu, H Hartono, NSS Ang… - Applied Physics …, 2011 - link.aip.org
... of III-nitride LEDs. The reduction in dislocation density in the overgrown GaN is
studied by cross-section transmission electron microscopy (TEM) and the pore
density is determined from atomic force microscopy (AFM) scan. ...
Related articles - All 4 versions
HW Zhang, K Lu, R Pippan, X Huang… - Scripta Materialia, 2011 - Elsevier
... a result of dislocation–solute interaction reducing the mobility of dislocations in both two and
three dimensions [6]. Such a reduction in dislocation mobility may also result in deformation-
induced twinning; however, this was observed only to a limited extent in the three samples. ...
Related articles

联系我们 | 站点地图 | 友情链接 | 授权代理商 | 加入我们

© 2010-2024 中国: LetPub上海    网站备案号:沪ICP备10217908号-1    沪公网安备号:31010402006960 (网站)31010405000484 (蝌蝌APP)

增值电信业务经营许可证:沪B2-20211595    网络文化经营许可证:沪网文[2023]2004-152号

礼翰商务信息咨询(上海)有限公司      办公地址:上海市徐汇区漕溪北路88号圣爱大厦1803室